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Observation of fine one-dimensionally disordered layers in silicon carbide

Barnes, Paul and Kelly, Jim and Chikusa, G.R. (1991) Observation of fine one-dimensionally disordered layers in silicon carbide. Philosophical Magazine Letters 64 (1), pp. 7-13. ISSN 0950-0839.

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Official URL: http://dx.doi.org/10.1080/09500839108214660

Abstract

The improved resolution of synchrotron edge-topography is enabling thinner (less than 100 microns), silicon carbide crystals to be studied, and is providing a more detailed and wider database on polytype depth profiles. Fine long-period and one-dimensionally-disordered layers, 5-25 microns thick, can now be confidently resolved and are found to be very common features, often in association with high-defect density bands. These features are illustrated in this paper using three examples. A new long period polytype LPP (152H/456R) has been discovered and reported here for the first time.

Item Type: Article
Keyword(s) / Subject(s): one-dimensional disorder, polytypes, silicon carbide
School or Research Centre: Birkbeck Schools and Research Centres > School of Science > Biological Sciences
Depositing User: Dr. Jim Kelly
Date Deposited: 09 Oct 2006
Last Modified: 17 Apr 2013 12:33
URI: http://eprints.bbk.ac.uk/id/eprint/407

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