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    Long period polytype boundaries in silicon carbide

    Kelly, Jim and Barnes, Paul and Fisher, G.R. (2001) Long period polytype boundaries in silicon carbide. Ferroelectrics 250 , pp. 187-190. ISSN 0015-0193.


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    A significant gap in our understanding of polytypism exists, caused partly by the lack of experimental data on the spatial distribution of polytype coalescence and knowledge of the regions between adjoining polytypes. Few observations, Takei & Francombe (1967) apart, of the relative location of different polytypes have been reported. A phenomenological description of the boundaries, exact position of one-dimensional disorder (1DD) and long period polytypes (LPP’s) has been made possible by synchrotron X-ray diffraction topography (XRDT).


    Item Type: Article
    Additional Information: Proceedings of International Conference Aperiodic 2000; Nijmegen, Netherlands July 4-8 2000
    Keyword(s) / Subject(s): X ray diffraction topography, Long period polytypes, silicon carbide
    School: School of Science > Biological Sciences
    Depositing User: Dr. Jim Kelly
    Date Deposited: 09 Aug 2006
    Last Modified: 10 Jun 2021 02:59


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