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    Observation of fine one-dimensionally disordered layers in silicon carbide

    Barnes, Paul and Kelly, Jim and Chikusa, G.R. (1991) Observation of fine one-dimensionally disordered layers in silicon carbide. Philosophical Magazine Letters 64 (1), pp. 7-13. ISSN 0950-0839.


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    The improved resolution of synchrotron edge-topography is enabling thinner (less than 100 microns), silicon carbide crystals to be studied, and is providing a more detailed and wider database on polytype depth profiles. Fine long-period and one-dimensionally-disordered layers, 5-25 microns thick, can now be confidently resolved and are found to be very common features, often in association with high-defect density bands. These features are illustrated in this paper using three examples. A new long period polytype LPP (152H/456R) has been discovered and reported here for the first time.


    Item Type: Article
    Keyword(s) / Subject(s): one-dimensional disorder, polytypes, silicon carbide
    School: School of Science > Biological Sciences
    Depositing User: Dr. Jim Kelly
    Date Deposited: 09 Oct 2006
    Last Modified: 11 Jun 2021 03:26


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